• DocumentCode
    2346584
  • Title

    Accurate determination of the main parameters from Vt(V b) curves of fully-depleted SOI devices

  • Author

    Toffoli, A. ; Pelloie, J.L. ; Faynot, O. ; Raynaud, C. ; Giffard, B. ; Hartmann, J.

  • Author_Institution
    LETI, CEA, Centre d´´Etudes Nucleaires, de Grenoble, France
  • fYear
    1995
  • fDate
    22-25 Mar 1995
  • Firstpage
    71
  • Lastpage
    76
  • Abstract
    This paper describes a simple and accurate method to extract the main technological parameters: buried oxide thickness, silicon film thickness and doping level which are used to design fully-depleted SOI devices. Both enhancement-mode and accumulation-mode devices are measured for different silicon thicknesses from 200 to 500 Å, the parameters are extracted from the variation of the front threshold voltage with the back gate bias using the corresponding analytical models
  • Keywords
    MOS integrated circuits; MOSFET; integrated circuit measurement; silicon-on-insulator; 200 to 500 A; Si; Si film thickness; accumulation-mode; back gate bias; buried oxide thickness; doping level; enhancement-mode; front threshold voltage; fully-depleted SOI devices; technological parameters; Analytical models; Capacitance; Doping; Equations; Low voltage; MOSFET circuits; Semiconductor films; Silicon; Thickness measurement; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
  • Conference_Location
    Nara
  • Print_ISBN
    0-7803-2065-4
  • Type

    conf

  • DOI
    10.1109/ICMTS.1995.513948
  • Filename
    513948
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2346584