Title :
Strain overcompensated GaInP/AlGaInP quantum well laser structures for improved reliability at high output powers
Author :
Valster, A. ; Meney, A.T. ; Downes, J.R. ; Adams, A.R. ; Brouwer, A.A. ; Corbijn, A.J.
Author_Institution :
Philips Optoelectron. Centre, Eindhoven, Netherlands
Abstract :
Strain overcompensated multiple quantum well laser structures have been analyzed theoretically as well as experimentally for the first time. Strain overcompensation reduces the bandgap shrinkage which normally takes place at the facets due to compressive strain relaxation. This results in a lower temperature rise of the lasing spot leading to a remarkable improvement of the reliability of high power laser diodes.
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium compounds; indium compounds; laser reliability; optical fabrication; quantum well lasers; semiconductor device reliability; vapour phase epitaxial growth; GaInP-AlGaInP; GaInP/AlGaInP; bandgap shrinkage; compressive strain relaxation; facets; high output powers; high power laser diodes; lasing spot; quantum well laser structures; reliability; strain overcompensated quantum well lasers; strain overcompensation; temperature rise; Aging; Capacitive sensors; Coatings; Diode lasers; Electrons; Photonic band gap; Quantum well lasers; Semiconductor lasers; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.558765
