Title :
Characterization of density of trap states at the back interface of SIMOX wafers
Author :
Takubo, Atsushi ; Hanajiri, Tatsuro ; Sugano, Takuo ; Kajiyama, Kenji
Author_Institution :
Dept. of Electr. Eng., Toyo Univ., Kujirai, Japan
Abstract :
We measured the density of the trap states at the interface of SIMOX (Separation by Implanted Oxygen) wafers by high frequency C-V measurements of MOS diodes fabricated on SIMOX wafers. SIMOX structures with p-type or n-type silicon substrates are found to have traps of about 1012 cm-2 eV-1 at the back interface. We tried to estimate the density of the trap states at the front interface, too
Keywords :
MIS devices; SIMOX; electron traps; interface states; MOS diodes; SIMOX wafers; Si-SiO2; back interface; density of trap states; high frequency C-V measurements; n-type silicon substrate; p-type silicon substrate; Capacitance measurement; Capacitance-voltage characteristics; Density measurement; Diodes; Frequency measurement; Oxygen; Silicon; State estimation; Substrates; Wet etching;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513949
