• DocumentCode
    2346598
  • Title

    Characterization of density of trap states at the back interface of SIMOX wafers

  • Author

    Takubo, Atsushi ; Hanajiri, Tatsuro ; Sugano, Takuo ; Kajiyama, Kenji

  • Author_Institution
    Dept. of Electr. Eng., Toyo Univ., Kujirai, Japan
  • fYear
    1995
  • fDate
    22-25 Mar 1995
  • Firstpage
    77
  • Lastpage
    80
  • Abstract
    We measured the density of the trap states at the interface of SIMOX (Separation by Implanted Oxygen) wafers by high frequency C-V measurements of MOS diodes fabricated on SIMOX wafers. SIMOX structures with p-type or n-type silicon substrates are found to have traps of about 1012 cm-2 eV-1 at the back interface. We tried to estimate the density of the trap states at the front interface, too
  • Keywords
    MIS devices; SIMOX; electron traps; interface states; MOS diodes; SIMOX wafers; Si-SiO2; back interface; density of trap states; high frequency C-V measurements; n-type silicon substrate; p-type silicon substrate; Capacitance measurement; Capacitance-voltage characteristics; Density measurement; Diodes; Frequency measurement; Oxygen; Silicon; State estimation; Substrates; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
  • Conference_Location
    Nara
  • Print_ISBN
    0-7803-2065-4
  • Type

    conf

  • DOI
    10.1109/ICMTS.1995.513949
  • Filename
    513949
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2346598