Title :
Lasing mechanisms and optical gain in visible-bandgap II-VI quantum well structures
Author :
Henneberger, F. ; Kreller, F. ; Puls, J. ; Wunsche, H.J.
Author_Institution :
Inst. fur Phys., Humboldt-Univ., Berlin, Germany
Abstract :
The origin of lasing in (Zn,Cd)Se/ZnSe quantum well structures is elucidated in a temperature range between 5 and 300 K. We observe very large bi-exciton gain (2.5/spl middot/10/sup 4/ cm/sup -1/), turning into less efficient electron-hole plasma recombination above 160 K.
Keywords :
II-VI semiconductors; biexcitons; binding energy; cadmium compounds; electron-hole recombination; magneto-optical effects; molecular beam epitaxial growth; quantum well lasers; semiconductor heterojunctions; zinc compounds; (Zn,Cd)Se/ZnSe; 5 to 300 K; II-VI quantum well structures; ZnCdSe-ZnSe; bi-exciton gain; electron-hole plasma recombination; lasing mechanisms; optical gain; quantum well structures; temperature range; Electromagnetic wave absorption; Excitons; Laser stability; Nonlinear optics; Optical pumping; Plasma measurements; Plasma temperature; Radiative recombination; Solids; Stimulated emission;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.558768
