DocumentCode
2346662
Title
High-power continuous-wave operation of 512-nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH laser diodes
Author
Nakayama, N. ; Taniguchi, S. ; Hino, T. ; Nakano, K. ; Ishibashi, A.
Author_Institution
Res. Center, Sony Corp., Yokohama, Japan
fYear
1996
fDate
13-18 Oct. 1996
Firstpage
145
Lastpage
146
Abstract
Continuous-wave (CW) light output powers of 87 mW at room temperature and 30 mW at 60/spl deg/C have been obtained for ZnCdSe/ZnSSe/ZnMgSSe single quantum-well (SQW) separate-confinement heterostructure (SCH) laser diodes grown on a GaAs substrate by molecular beam epitaxy (MBE).
Keywords
II-VI semiconductors; cadmium compounds; laser beams; magnesium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor heterojunctions; zinc compounds; 298 K; 30 mW; 512 nm; 60 C; 87 mW; GaAs; GaAs substrate; SQW-SCH laser diodes; ZnCdSe-ZnSSe-ZnMgSSe; ZnCdSe/ZnSSe/ZnMgSSe; continuous-wave light output powers; high-power continuous-wave operation; molecular beam epitaxy; room temperature; single quantum-well separate-confinement heterostructure laser diodes; Coatings; Dielectric substrates; Diode lasers; Molecular beam epitaxial growth; Optical pulses; Power generation; Power lasers; Quantum well lasers; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location
Haifa, Israel
Print_ISBN
0-7803-3163-X
Type
conf
DOI
10.1109/ISLC.1996.558769
Filename
558769
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