Title :
Gate antenna structures for monitoring oxide quality and reliability
Author :
Nariani, Subhash R. ; Gabriel, Calvin T. ; Pramanik, Pipankar ; Ng, Kenny
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
Abstract :
Gate antenna structures have been developed to detect charge induced process damage to sub-micron gate oxide. For the first time, this damage is correlated with product failure due to gate oxide in accelerated life testing. These antenna structures are thus proven to be useful for wafer level gate oxide reliability screening
Keywords :
MOS integrated circuits; application specific integrated circuits; failure analysis; integrated circuit reliability; integrated circuit testing; life testing; ASICs; IC reliability; accelerated life testing; charge induced process damage; gate antenna structures; oxide quality; oxide reliability; product failure; sub-micron gate oxide; wafer level reliability screening; Antenna measurements; Dielectrics; Etching; Gate leakage; Monitoring; Plasma applications; Plasma measurements; Plasma properties; Protection; Very large scale integration;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513952
