Title :
Test structure and simplified distribution model for identification of base resistance components in self-aligned polysilicon base electrode bipolar transistors
Author :
Tanabe, Masamichi ; Shimamoto, Hiromi ; Onai, Takahiro ; Washio, Katsuyoshi
Author_Institution :
Hitachi Device Eng. Co. Ltd., Kokobunji, Japan
Abstract :
A test structure and a simplified distribution base resistance model (SDM) are proposed to identify each component of the base resistance and to obtain the dominant one. This model separates the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter
Keywords :
bipolar transistors; semiconductor device models; semiconductor device testing; silicon; Si; parasitic base resistance; self-aligned polysilicon base electrode bipolar transistors; simplified distribution model; test structure; Automatic testing; Bipolar transistors; Circuit testing; Conductivity; Electrodes; Equivalent circuits; Frequency; Laboratories; Noise figure; Resistors;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513958
