Title :
Optical gain for wurtzite GaN with anisotropic strain in c-plane
Author :
Domen, K. ; Horino, K. ; Kuramata, A. ; Tanahashi, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We calculated band structures of (1100)-oriented GaN with various strains. We found that introducing anisotropic strain in the c-plane split the heavy hole and light hole bands, resulting in reduction of the transparent carrier density.
Keywords :
III-V semiconductors; band structure; effective mass; electron density; gallium compounds; hole density; piezo-optical effects; semiconductor materials; valence bands; (1100)-orientation; GaN; anisotropic strain; band structures; c-plane; heavy hole bands; light hole bands; optical gain; transparent carrier density; wurtzite; Anisotropic magnetoresistance; Capacitive sensors; Charge carrier density; Effective mass; Energy states; Gallium nitride; Geometrical optics; Laboratories; Optical films; Tensile strain;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.558772
