Title :
Three-port RF characterization of foundry dual-gate FETs using two-port test structures with on-chip loading resistors
Author :
Lott, Urs ; Baumberger, Werner ; Gisiger, Urs
Author_Institution :
Lab. for Electromagnetic Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
Special test structures for the three-port linear RF characterization of dual-gate FETs using on-chip integrated 50 ohm load resistors for the third port are described. These test structures allow us to characterize dual-gate FETs with a standard two-port network analyzer and only two wafer probes. Measurement results of test FETs realized on a commercial GaAs foundry MESFET process show that good accuracy of the three-port S-parameters is achieved
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; UHF field effect transistors; UHF measurement; gallium arsenide; microwave field effect transistors; microwave measurement; multiport networks; network analysers; semiconductor device testing; 0.2 to 40 GHz; GaAs; GaAs foundry MESFET process; foundry dual-gate FETs; on-chip loading resistors; three-port RF characterization; three-port S-parameters; two-port network analyzer; two-port test structures; wafer probes; Circuit testing; Electronic equipment testing; FETs; Foundries; Gallium arsenide; Measurement standards; Probes; Radio frequency; Resistors; Scattering parameters;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513966
