Title :
High-temperature amorphous-like semiconductors
Author :
Golikova, O.A. ; Kazanin, M.M.
Author_Institution :
A.F.Ioffe Physico-Technical Inst., St. Petersburg, Russia
Abstract :
The experimental results of a study of high-temperature boron-rich semiconductors, such as α- and β-AlB12, MgAlB14, and REB66 (where RE are rare earths, e.g. Gd), are reviewed. They were shown to represent a novel class of unique solids, combining physico-chemical properties of refractory crystals with electrical, optical and thermal properties typical for amorphous semiconductors due to specific features of their lattice. These semiconductors are believed to be promising for high-temperature device applications
Keywords :
Hall mobility; aluminium compounds; amorphous semiconductors; electrical conductivity; gadolinium compounds; high-temperature electronics; magnesium compounds; thermal conductivity; AlB12; GdB66; MgAlB14; alpha-AlB12; alpha-GdB66; alpha-MgAlB14; amorphous semiconductors; amorphous-like semiconductors; beta-AlB12; beta-GdB66; beta-MgAlB14; electrical properties; high-temperature amorphous-like semiconductors; high-temperature boron-rich semiconductors; high-temperature device applications; lattice-specific features; optical properties; physico-chemical properties; refractory crystals; thermal properties; Amorphous semiconductors; Bonding; Boron; Crystallography; Crystals; Lattices; Optical refraction; Solids; Temperature dependence; Thermal conductivity;
Conference_Titel :
High-Temperature Electronic Materials, Devices and Sensors Conference, 1998
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-4437-5
DOI :
10.1109/HTEMDS.1998.730689
