High-temperature amorphous-like semiconductors

Author

Golikova, O.A. ; Kazanin, M.M.

Author_Institution

A.F.Ioffe Physico-Technical Inst., St. Petersburg, Russia

fYear

1998

fDate

22-27 Feb 1998

Firstpage

136

Lastpage

140

Abstract

The experimental results of a study of high-temperature boron-rich semiconductors, such as α- and β-AlB₁₂, MgAlB₁₄, and REB₆₆ (where RE are rare earths, e.g. Gd), are reviewed. They were shown to represent a novel class of unique solids, combining physico-chemical properties of refractory crystals with electrical, optical and thermal properties typical for amorphous semiconductors due to specific features of their lattice. These semiconductors are believed to be promising for high-temperature device applications

Keywords

Hall mobility; aluminium compounds; amorphous semiconductors; electrical conductivity; gadolinium compounds; high-temperature electronics; magnesium compounds; thermal conductivity; AlB₁₂; GdB₆₆; MgAlB₁₄; alpha-AlB₁₂; alpha-GdB₆₆; alpha-MgAlB₁₄; amorphous semiconductors; amorphous-like semiconductors; beta-AlB₁₂; beta-GdB₆₆; beta-MgAlB₁₄; electrical properties; high-temperature amorphous-like semiconductors; high-temperature boron-rich semiconductors; high-temperature device applications; lattice-specific features; optical properties; physico-chemical properties; refractory crystals; thermal properties; Amorphous semiconductors; Bonding; Boron; Crystallography; Crystals; Lattices; Optical refraction; Solids; Temperature dependence; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

High-Temperature Electronic Materials, Devices and Sensors Conference, 1998

Conference_Location

San Diego, CA

Print_ISBN

0-7803-4437-5

Type

conf

DOI

10.1109/HTEMDS.1998.730689

Filename

730689