Title :
Experimental analysis of room-temperature optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells
Author :
Hangleiter, A. ; Frankowsky, G. ; Härle, V. ; Steuber, F. ; Scholz, F.
Author_Institution :
4. Phys. Inst., Stuttgart Univ., Germany
Abstract :
We have studied the optical gain in nitride-based laser structures. We find evidence for excitonic gain at room temperature. A strong polarization dependence of the gain is observed, in accordance with the band structure. We have used optical gain spectroscopy employing the stripe excitation method in order to elucidate the mechanisms of optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells.
Keywords :
III-V semiconductors; aluminium compounds; band structure; gallium compounds; indium compounds; light polarisation; quantum well lasers; visible spectra; GaInN-GaN; GaN-AlGaN; GaN-AlGaN double heterostructures; band structure; excitonic gain; nitride-based laser structures; optical gain; optical gain spectroscopy; quantum wells; room temperature; room-temperature optical gain; stripe excitation method; strong polarization dependence; Aluminum gallium nitride; DH-HEMTs; Excitons; Fluctuations; Gallium nitride; Optical arrays; Optical polarization; Optical pumping; Optical scattering; Phonons;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.558773
