Title :
United methodology for pre-determination of bipolar transistor SPICE model parameters for low, middle and high power ICs
Author :
Petrosjanc, K.O. ; Kharitonov, I.A. ; Rjabov, N.I.
Author_Institution :
Moscow Univ. of Electron. & Math., Russia
Abstract :
To minimize measurement efforts a united methodology is proposed for getting SPICE model parameters for low, middle and high power bipolar devices with arbitrary layouts. The standard test structure technique is connected with the using of universal software tools for resistance numerical calculation. This approach is effectively applicable to the complex analog and/or digital ICs which are yet to be fabricated
Keywords :
SPICE; bipolar integrated circuits; bipolar transistors; circuit layout CAD; integrated circuit design; power integrated circuits; semiconductor device models; SPICE model parameters; arbitrary layouts; bipolar transistor; power ICs; resistance numerical calculation; test structure technique; universal software tools; Bipolar transistors; Electrical resistance measurement; Equations; Parameter extraction; SPICE; Semiconductor device measurement; Size measurement; Software standards; Software testing; Software tools;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513975
