Reduction of short channel effects in SOI MOSFETs with 35 nm channel width and 70 nm channel length

We report the fabrication and characterization of SOI NMOSFETs with channel width as narrow as 35 nm. For the first time, it is observed that using a narrow channel width, the short channel effects in SOI MOSFETs can be significantly reduced because the gate wrapped around the narrow channel side wall allowing a better gate control in horizontal and vertical direction. With a 35 nm channel width, we are able to realize well-behaved SOI NMOSFETs with effective channel length of 70 nm.