DocumentCode
2347123
Title
A new test structure to study electromigration at grain boundaries using the single-crystal aluminum interconnection
Author
Kusuyama, Koichi ; Nakajima, Yasushi ; Murakami, Yoshinori
Author_Institution
Res. Center, Nissan Motor Co. Ltd., Kanagawa, Japan
fYear
1995
fDate
22-25 Mar 1995
Firstpage
225
Lastpage
228
Abstract
The new test structure with single-crystal aluminum interconnection made by the lateral-epitaxial growth method, was designed to study electromigration (EM) at grain boundaries in bamboo structure. Having only two bamboo grain boundaries, the EM mechanism can be analyzed more accurately by this new structure than using the ordinary structure of series of grain boundaries
Keywords
ULSI; aluminium; electromigration; grain boundary diffusion; integrated circuit metallisation; solid phase epitaxial growth; Al; EM mechanism; ULSI; bamboo structure; electromigration; grain boundaries; lateral-epitaxial growth method; solid phase epitaxial growth; submicrometre Al interconnection; Aluminum; Electromigration; Electron beams; Grain boundaries; Integrated circuit interconnections; Scanning electron microscopy; Substrates; Testing; Transmission electron microscopy; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location
Nara
Print_ISBN
0-7803-2065-4
Type
conf
DOI
10.1109/ICMTS.1995.513977
Filename
513977
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