DocumentCode
2347212
Title
Electrical conductivity of ceramics of SiC-AlN, SiC-BeO, Al2 O3 in the temperature range 300-1800 K
Author
Bakin, A.S. ; Dorozhkin, S.I. ; Shabanov, S.A.
fYear
1998
fDate
22-27 Feb 1998
Firstpage
196
Lastpage
198
Abstract
The electrophysical properties of SiC-AlN, SiC-BeO, and Al2 O3 ceramics at high temperatures were investigated. Samples of ceramics were obtained by the hot-pressure method. The investigation shows that specific resistance at 300 K is: 1012 Ω.cm, 109 Ω.cm, and 107 Ω.cm for SiC-BeO ceramics containing 0.5%, 1.0%, and 2.0% BeO respectively; 1012 Ω.cm, 108 Ω.cm, and 106 Ω.cm for SiC-AlN ceramics containing ⩾50%, 20% and 10% AlN respectively; and 1012 Ω.cm for Al2O3. The specific resistance of all of these ceramics at 1500 K is about 10 Ω.cm
Keywords
alumina; aluminium compounds; beryllium compounds; ceramic packaging; electrical conductivity; high-temperature electronics; hot pressing; silicon compounds; thermal analysis; thermal management (packaging); 1 Gohmcm; 1 Mohmcm; 1 Tohmcm; 10 Mohmcm; 10 ohmcm; 100 Mohmcm; 300 to 1800 K; Al2O3; Al2O3 ceramics; SiC-AlN; SiC-AlN ceramics; SiC-BeO; SiC-BeO ceramics; electrical conductivity; high temperature electronics; hot-pressure method; specific resistance; temperature range; Ceramics; Conducting materials; Conductivity measurement; Electronic packaging thermal management; Impurities; Powders; Silicon carbide; Temperature dependence; Temperature distribution; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
High-Temperature Electronic Materials, Devices and Sensors Conference, 1998
Conference_Location
San Diego, CA
Print_ISBN
0-7803-4437-5
Type
conf
DOI
10.1109/HTEMDS.1998.730697
Filename
730697
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