DocumentCode :
2347213
Title :
Depth measurements using alpha particles and upsetable SRAMs
Author :
Buehler, M.G. ; Reier, M. ; Soli, G.A.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear :
1995
fDate :
22-25 Mar 1995
Firstpage :
253
Lastpage :
257
Abstract :
A custom designed SRAM was used to measure the thickness of integrated circuit over layers and the epi-layer thickness using alpha particles and a test SRAM. The over layer consists of oxide, nitride, metal and junction regions
Keywords :
CMOS memory circuits; SRAM chips; alpha-particle effects; application specific integrated circuits; epitaxial layers; integrated circuit measurement; thickness measurement; 4 kbit; CMOS process; alpha particles; custom designed SRAM; depth measurement; epilayer; integrated circuit overlayer; thickness measurement; upsetable SRAM; Alpha particles; Circuit testing; Extraterrestrial measurements; Integrated circuit measurements; Inverters; Particle measurements; Random access memory; Silicon; Space technology; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
Type :
conf
DOI :
10.1109/ICMTS.1995.513983
Filename :
513983
Link To Document :
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