Title :
Impact of scaling silicon film thickness on hot carrier effects in thin film fully depleted SOI MOSFETs
Author :
Banna, S.R. ; Chan, P.C.H. ; Mansun Chan ; Ko, P.K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
Abstract :
Scaling silicon film thickness increases drain electric field and hot carrier effects in fully depleted silicon-on-insulator (FDSOI). Debiasing effect of source/drain resistance and self heating are the causes for contradicting results between device simulation and measurements. In comparison with bulk technology, FDSOI is more immune to hot carrier effects due to coupling between front and back gates for a given silicon film thickness or junction depth.
Keywords :
MOSFET; hot carriers; silicon-on-insulator; thin film transistors; FDSOI; Si; debiasing effect; drain electric field; gate coupling; hot carrier effect; self heating; silicon film thickness scaling; source/drain resistance; thin film fully depleted SOI MOSFET; Current measurement; Electrical resistance measurement; Hot carrier effects; MOS devices; MOSFETs; Power engineering and energy; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Voltage;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546335
