DocumentCode
2347281
Title
Impact of scaling silicon film thickness on hot carrier effects in thin film fully depleted SOI MOSFETs
Author
Banna, S.R. ; Chan, P.C.H. ; Mansun Chan ; Ko, P.K.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
fYear
1996
fDate
26-26 June 1996
Firstpage
112
Lastpage
113
Abstract
Scaling silicon film thickness increases drain electric field and hot carrier effects in fully depleted silicon-on-insulator (FDSOI). Debiasing effect of source/drain resistance and self heating are the causes for contradicting results between device simulation and measurements. In comparison with bulk technology, FDSOI is more immune to hot carrier effects due to coupling between front and back gates for a given silicon film thickness or junction depth.
Keywords
MOSFET; hot carriers; silicon-on-insulator; thin film transistors; FDSOI; Si; debiasing effect; drain electric field; gate coupling; hot carrier effect; self heating; silicon film thickness scaling; source/drain resistance; thin film fully depleted SOI MOSFET; Current measurement; Electrical resistance measurement; Hot carrier effects; MOS devices; MOSFETs; Power engineering and energy; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-3358-6
Type
conf
DOI
10.1109/DRC.1996.546335
Filename
546335
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