Title :
A combined CBR-MOS gate structure for mobility and channel width extraction
Author :
Santander, Joaquin ; Lozano, Manuel ; Cané, Carles ; Tamayo, Emilio Lora
Author_Institution :
Centro Nacional de Microelectronica, CSIC, Madrid, Spain
Abstract :
A new test structure based on a Cross-Bridge-Resistor with the conducting layer made of the channel of a MOS transistor is presented. This structure has been fabricated in a CMOS technology, and the possibilities for extracting the carrier mobility and channel width without parasitic effects are analyzed
Keywords :
MOSFET; carrier mobility; semiconductor device models; semiconductor device testing; CBR-MOS gate structure; CMOS technology; carrier mobility; channel width extraction; conducting layer; cross bridge resistor; device models; test structure; Arm; CMOS technology; Contacts; Current measurement; Electrical resistance measurement; MOSFETs; Resistors; Semiconductor device modeling; Testing; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513987
