Title :
A new technique for measuring threshold voltage distribution in flash EEPROM devices
Author :
Himeno, T. ; Matsukawa, N. ; Hazama, H. ; Sakui, K. ; Oshikiri, M. ; Masuda, K. ; Kanda, K. ; Itoh, Y. ; Miyamoto, J.
Author_Institution :
Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
A new, simple test circuit for evaluating the reliability of flash EEPROM devices is described. It measures threshold voltage (Vth ) distributions of a large number of cell transistors with easy static operation similar to I-V curve measurement. Moreover, each cell transistor in a large array is selectable to measure static characteristics. This circuit makes it possible to measure the Vth distribution even in the negative region after erase operation for a NAND-type EEPROM
Keywords :
EPROM; MOS memory circuits; NAND circuits; characteristics measurement; integrated circuit measurement; integrated circuit reliability; integrated circuit testing; I-V curve measurement; NAND-type EEPROM; cell transistors; erase operation; flash EEPROM devices; negative region; reliability; static characteristics; static operation; test circuit; threshold voltage; threshold voltage distribution; Battery charge measurement; Circuit testing; EPROM; Laboratories; Nonvolatile memory; Reliability engineering; Semiconductor devices; Threshold voltage; Timing; Voltage measurement;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513988
