A new technique for measuring threshold voltage distribution in flash EEPROM devices

Author

Himeno, T. ; Matsukawa, N. ; Hazama, H. ; Sakui, K. ; Oshikiri, M. ; Masuda, K. ; Kanda, K. ; Itoh, Y. ; Miyamoto, J.

Author_Institution

Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan

fYear

1995

fDate

22-25 Mar 1995

Firstpage

283

Lastpage

287

Abstract

A new, simple test circuit for evaluating the reliability of flash EEPROM devices is described. It measures threshold voltage (V_th) distributions of a large number of cell transistors with easy static operation similar to I-V curve measurement. Moreover, each cell transistor in a large array is selectable to measure static characteristics. This circuit makes it possible to measure the V_th distribution even in the negative region after erase operation for a NAND-type EEPROM

Keywords

EPROM; MOS memory circuits; NAND circuits; characteristics measurement; integrated circuit measurement; integrated circuit reliability; integrated circuit testing; I-V curve measurement; NAND-type EEPROM; cell transistors; erase operation; flash EEPROM devices; negative region; reliability; static characteristics; static operation; test circuit; threshold voltage; threshold voltage distribution; Battery charge measurement; Circuit testing; EPROM; Laboratories; Nonvolatile memory; Reliability engineering; Semiconductor devices; Threshold voltage; Timing; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on

Conference_Location

Nara

Print_ISBN

0-7803-2065-4

Type

conf

DOI

10.1109/ICMTS.1995.513988

Filename

513988