Title :
Wafer mapping using DOE and RSM techniques
Author :
Walton, Anthony J. ; Fallon, Martin ; Wilson, Dave
Author_Institution :
Dept. of Electr. Eng., Edinburgh Univ., UK
Abstract :
This paper applies classical DOE techniques to the the selection of measurement points for wafer mapping. RSM is used to generate the contour plots and it is shown that in many cases transformations can be used to improve the accuracy of wafer maps
Keywords :
design of experiments; integrated circuit measurement; monolithic integrated circuits; statistical analysis; DOE techniques; RSM techniques; contour plots; design of experiment; measurement points; response surface methodology; transformations; wafer mapping; Design for experiments; Distortion measurement; Equations; Position measurement; Radiofrequency interference; Response surface methodology; Sampling methods; Semiconductor device modeling; Surface fitting; US Department of Energy;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513989
