DocumentCode
2347481
Title
Superhigh power picosecond optical pulses from Q-switched diode laser
Author
Portnoi, E.L. ; Venus, G.B. ; Gadjiev, I.M. ; Frahm, Jens ; Kuhl, D.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear
1996
fDate
13-18 Oct. 1996
Firstpage
157
Lastpage
158
Abstract
Generation of 40 ps optical pulses was demonstrated with a peak power of up to 45 W in a single mode, and of up to 380 W from broad area laser diode. Such optical power was achieved in Q-switching regime by means of a saturable absorber formed inside the laser cavity by deep implantation of heavy ions.
Keywords
Q-switching; high-speed optical techniques; ion implantation; laser cavity resonators; laser modes; optical saturable absorption; semiconductor lasers; 380 W; 40 ps; 45 W; Q-switched diode laser; Q-switching regime; broad area laser diode; deep heavy ion implantation; laser cavity; optical power; peak power; ps optical pulse generation; saturable absorber; single mode; superhigh power picosecond optical pulses; Diode lasers; Laser modes; Optical pulse generation; Optical pulses; Optical pumping; Optical sensors; Particle beam optics; Power generation; Power lasers; Space vector pulse width modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location
Haifa, Israel
Print_ISBN
0-7803-3163-X
Type
conf
DOI
10.1109/ISLC.1996.558777
Filename
558777
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