Modeling the bias and scaling dependence of drain current fluctuations due to single carrier trapping in submicron MOSFET´s

A new effective field formulation for the amplitude of RTS transitions in submicron MOSFETs is presented and supported through experimental measurements. Localized fluctuations in flat-band voltage (V/sub FB/) due to the presence of oxide charge during the trap charged state cause variations in threshold (V/sub T/) and mobility /spl mu/. Using standard techniques, the shifts in V/sub T/ and /spl mu/ are extracted from RTS amplitudes and the device transfer characteristics measured in the linear operating mode. It is found that both V/sub T/ and /spl mu/ increase during the trap charged state and that these increases accurately model the drain current bias dependence.