• DocumentCode
    2348272
  • Title

    A low-power ultra-fast capacitor-less LDO with advanced dynamic push-pull techniques

  • Author

    Ming, Xin ; Zhou, Ze-kun ; Zhang, Bo

  • Author_Institution
    State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2011
  • fDate
    3-5 Oct. 2011
  • Firstpage
    54
  • Lastpage
    59
  • Abstract
    A current-efficent, fully integrated low-dropout regulator(LDO) with improved load transient responses for system-on-chips(SoC) is presented in this paper. It makes use of high bandwidth common-gate amplifier and slew-rate enhancement circuit(SRE) triggered by voltage spikes to improve output voltage spike and response time of the LDO greatly. The proposed circuit has been implemented in a 0.35μm standard CMOS process and occupies an active chip area of 0.057mm2. Experimental results show that it can deliver 100mA load current at 150mV dropout voltage. It only consumes 8μA quiescent current and is able to recover within 0.2μs even under the maximum load current change. Consequently, a low-power and ultra-fast capacitor-less LDO can be achieved.
  • Keywords
    CMOS analogue integrated circuits; amplifiers; low-power electronics; system-on-chip; transient response; CMOS process; SRE; SoC; advanced dynamic push-pull techniques; current 100 mA; current 8 muA; high bandwidth common-gate amplifier; improved load transient responses; low-power ultrafast capacitor-less LDO; low-power ultrafast capacitor-less low-dropout regulator; size 0.35 mum; slew-rate enhancement circuit; system-on-chips; time 0.2 mus; voltage 150 mV; voltage spikes; Bandwidth; Capacitors; Logic gates; Power transistors; Transconductance; Transient analysis; Transistors; Low-quiescent current; common-gate; high slew rate; low-dropout regulator; push-pull stage; system-on-chips;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI and System-on-Chip (VLSI-SoC), 2011 IEEE/IFIP 19th International Conference on
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4577-0171-9
  • Electronic_ISBN
    978-1-4577-0169-6
  • Type

    conf

  • DOI
    10.1109/VLSISoC.2011.6081629
  • Filename
    6081629