DocumentCode
2348273
Title
Circuit modeling of separate absorption, charge and multiplication avalanche photodiode (SACM-APD)
Author
Zarifkar, Abbas ; Soroosh, Mohammad
Author_Institution
Saveh Azad Univ., Iran
fYear
2004
fDate
6-9 Sept. 2004
Firstpage
213
Lastpage
219
Abstract
We present a circuit model for separate absorption, charge and multiplication avalanche photodiode (SACM-APD). It is based on the carrier rate equations in the different regions of the device. Using the model we obtain the photocurrent, quantum efficiency, and dark current. As examples, GaAs and InGaAs/InAlAs SACM-APDs are simulated. There is a good correspondence between the simulation and experimental results.
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; photoconductivity; semiconductor device models; InGaAs-InAlAs; absorption region; avalanche photodiode; carrier rate equations; charge region; circuit modeling; dark current; multiplication region; photocurrent; quantum efficiency; Avalanche photodiodes; Circuit simulation; Dark current; Differential equations; Electromagnetic wave absorption; Electronic mail; Gallium arsenide; Impact ionization; Optical noise; Photoconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser and Fiber-Optical Networks Modeling, 2004. Proceedings of LFNM 2004. 6th International Conference on
Print_ISBN
0-7803-8429-6
Type
conf
DOI
10.1109/LFNM.2004.1382469
Filename
1382469
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