Narrow channel GaInP/InGaAs/GaAs MODFET grown by MBE with record 2-DEG density for high frequency and power applications

Author

Pereiaslavets, B. ; Braunstein, J. ; Martin, G. ; Eastman, L.F. ; Yanka, R.W.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

1996

fDate

26-26 June 1996

Firstpage

128

Lastpage

129

Abstract

We have developed a new concept of narrow (50&74 /spl Aring/) channel MODFETS. It is shown theoretically and experimentally that the narrow channel device has higher electron sheet density and consequently better performance than a conventional wide channel MODFET. Excellent quality Ga/sub x/In/sub 1-x/P/In/sub y/Ga/sub 1-y/As/GaAs MODFETs with a pseudomorphic barrier and a pseudomorphic channel were grown by MBE. Record 2-Dimensional Electron Gas (2-DEG) carrier densities of 3.4/spl middot/10/sup 12/ cm/sup -2/ for single side doped MODFETs on GaAs substrate were measured. This sheet charge is larger than the previously reported results for OMVPE grown material, however the device structure is much simpler. 0.1 /spl mu/m gate-length MODFETs achieved f/sub T/´s over 100 GHz and f/sub max/´s over 180 GHz.

Keywords

III-V semiconductors; carrier density; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; two-dimensional electron gas; 0.1 micron; 100 GHz; 180 GHz; 2DEG; GaInP-InGaAs-GaAs; MBE growth; carrier density; electron sheet density; high frequency applications; narrow channel MODFET; power applications; pseudomorphic barrier; pseudomorphic channel; sheet charge; Charge carrier density; Density measurement; Electrons; Energy states; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Laboratories; MODFET circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1996. Digest. 54th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-3358-6

Type

conf

DOI

10.1109/DRC.1996.546341

Filename

546341