Performance evaluation of air-gap-based coaxial RF TSV for 3D NoC

Author

Yu, Le ; Yang, Haigang ; Zhang, Jia ; Wang, Wei

Author_Institution

Inst. of Electron., Beijing, China

fYear

2011

fDate

3-5 Oct. 2011

Firstpage

94

Lastpage

97

Abstract

In this paper, a novel air-gap-based coaxial Through Silicon Via (TSV) was proposed for on-chip RF interconnect, to fill up the increasing bandwidth gap between the demand and supply according for the 2007 International Technology Roadmap for Semiconductors. Based on earlier work, the expressions of characteristic impedance, attenuation and bandwidth have been proposed. Consequently, we assume an 80 multi-core 3D Network-on-Chip (NoC) system with Binary Phase Shift Keying (BPSK) modulation, to evaluate energy per bit and area per Gbps of the proposed air-gap-based coaxial TSV. The result indicates that the energy dissipation and area consumption of the proposed one are 40~50% and 10% better than the conventional dielectric RF TSV.

Keywords

integrated circuit interconnections; network-on-chip; phase shift keying; 3D NoC; air-gap-based coaxial RF TSV; air-gap-based coaxial through silicon via; area consumption; binary phase shift keying modulation; characteristic impedance; energy dissipation; multicore 3D network-on-chip system; on-chip RF interconnect; performance evaluation; Air gaps; Bandwidth; Binary phase shift keying; Copper; Radio frequency; Three dimensional displays; Through-silicon vias; Binary Phase Shift Keying (BPSK); air-gap; coaxial; radio frequency (RF); three dimensional (3D); through-silicon via (TSV);

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI and System-on-Chip (VLSI-SoC), 2011 IEEE/IFIP 19th International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4577-0171-9

Electronic_ISBN

978-1-4577-0169-6

Type

conf

DOI

10.1109/VLSISoC.2011.6081658

Filename

6081658