Random dopant variation in junctionless nanowire transistors

In this article we study the influence of random dopant variation in junctionless nanowire transistor using numerical modelling. Simulations have been carried out by three-dimensional quantum simulator based on Non-equilibrium Green´s function formalism. The simulations reveal that junctionless nanowire transistor suffers less variation in subthreshold region due to random dopant distribution compare to the conventional inversion mode counterpart. This improved behaviour arises from uniform distribution of ionized dopant in the channel under the gate and in the source/drain regions.