Author :
Ponoth, S. ; Vinet, M. ; Grenouillet, L. ; Kumar, A. ; Kulkarni, P. ; Liu, Q. ; Cheng, K. ; Haran, B. ; Possémé, N. ; Khakifirooz, A. ; Loubet, N. ; Mehta, S. ; Kuss, J. ; Destefanis, V. ; Berliner, N. ; Sreenivasan, R. ; Tiec, Y. Le ; Kanakasabapathy, S.
Abstract :
Two implantation based schemes were explored for ETSOI NFET devices targeted for the 20 nm node. Amorphization of the thin SOI is a key issue for the implant pre RSD scheme. This can be alleviated by implanting through liner. Variability is the key issue for the implant post RSD scheme which can be alleviated by good process controls and by the use of a two step epitaxy scheme.
Keywords :
amorphisation; epitaxial growth; field effect transistors; ion implantation; silicon-on-insulator; ETSOI device; Implanted ions; RSD scheme; amorphization; extremely thin silicon on insulator device; size 20 nm; two step epitaxy scheme; Epitaxial growth; Implants; Ions; Optical fibers; Performance evaluation; Silicon; Tuning;
