DocumentCode
2349152
Title
Implant approaches and challenges for 20nm node and beyond ETSOI devices
Author
Ponoth, S. ; Vinet, M. ; Grenouillet, L. ; Kumar, A. ; Kulkarni, P. ; Liu, Q. ; Cheng, K. ; Haran, B. ; Possémé, N. ; Khakifirooz, A. ; Loubet, N. ; Mehta, S. ; Kuss, J. ; Destefanis, V. ; Berliner, N. ; Sreenivasan, R. ; Tiec, Y. Le ; Kanakasabapathy, S.
Author_Institution
IBM, Albany, NY, USA
fYear
2011
fDate
3-6 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
Two implantation based schemes were explored for ETSOI NFET devices targeted for the 20 nm node. Amorphization of the thin SOI is a key issue for the implant pre RSD scheme. This can be alleviated by implanting through liner. Variability is the key issue for the implant post RSD scheme which can be alleviated by good process controls and by the use of a two step epitaxy scheme.
Keywords
amorphisation; epitaxial growth; field effect transistors; ion implantation; silicon-on-insulator; ETSOI device; Implanted ions; RSD scheme; amorphization; extremely thin silicon on insulator device; size 20 nm; two step epitaxy scheme; Epitaxial growth; Implants; Ions; Optical fibers; Performance evaluation; Silicon; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2011 IEEE International
Conference_Location
Tempe, AZ
ISSN
1078-621X
Print_ISBN
978-1-61284-761-0
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2011.6081679
Filename
6081679
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