Title :
A design of high PSRR CMOS voltage reference based on subthreshold MOSFETs
Author :
Shizhen, Huang ; Wei, Lin ; Wangsheng, Chen ; Weiming, Lin ; Peimin, Lu
Author_Institution :
Fujian Key Lab. of Microelectron. & Integrated Circuits, Fuzhou Univ., Fuzhou
Abstract :
Based on the principle of subthreshold voltage references, a voltage reference circuitry with high PSRR is proposed in this work. In HSPICE the simulation result shows that the PSRR performance of the circuit is very good as they are 53 dB at 100 KHz, 35 dB at 100 MHz and the max is close to 92 dB, the reference voltage is 706.92plusmn1.16 mV and the average temperature coefficient is 12.9 ppm/degC at the 5 V supply voltage as well as the range of -55degC to +125degC. Moreover, the current dissipation is not more than 1.6 muA at 5 V.
Keywords :
CMOS integrated circuits; HSPICE; current dissipation; frequency 100 kHz; high PSRR CMOS voltage reference; subthreshold MOSFET; voltage 5 V; voltage reference circuitry; CMOS integrated circuits; CMOS technology; Circuit simulation; Equations; Laboratories; Low voltage; MOSFETs; Microelectronics; Photonic band gap; Temperature distribution; High PSRR; Self-boost structure; Subthreshold; Voltage reference;
Conference_Titel :
Industrial Electronics and Applications, 2008. ICIEA 2008. 3rd IEEE Conference on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-1717-9
Electronic_ISBN :
978-1-4244-1718-6
DOI :
10.1109/ICIEA.2008.4582967
