DocumentCode
2349182
Title
Analysis and characterization of a new trench IGBT with improved layers
Author
Yang, Lingling ; Li, Kaihang ; Wu, Dongming
Author_Institution
Dept. of Phys., Xiamen Univ., Xiamen
fYear
2008
fDate
3-5 June 2008
Firstpage
2503
Lastpage
2506
Abstract
This paper presents a novel 2.0kV insulated gate bipolar transistor (IGBT) with trench gate structure by using an improved N-Base layer and an N-buffer layer. The new structure leads to improvement of conductivity modulation in N-Base. The numerical simulations show that the collector-emitter saturation voltage [Vce(sat)] and saturation current of new device are both lower than that of conventional IGBT with trench-gate structure. The details of physical mechanisms and analysis are also given.
Keywords
bipolar transistors; buffer layers; N-buffer layer; collector-emitter saturation voltage; conductivity modulation; insulated gate bipolar transistor; saturation current; Buffer layers; Conductivity; Doping; Gaussian distribution; Impurities; Insulated gate bipolar transistors; Numerical simulation; Physics; Silicon; Voltage; Trench insulated gate bipolar transistor; conductivity modulation; power device; saturation voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics and Applications, 2008. ICIEA 2008. 3rd IEEE Conference on
Conference_Location
Singapore
Print_ISBN
978-1-4244-1717-9
Electronic_ISBN
978-1-4244-1718-6
Type
conf
DOI
10.1109/ICIEA.2008.4582969
Filename
4582969
Link To Document