Title :
Analysis and characterization of a new trench IGBT with improved layers
Author :
Yang, Lingling ; Li, Kaihang ; Wu, Dongming
Author_Institution :
Dept. of Phys., Xiamen Univ., Xiamen
Abstract :
This paper presents a novel 2.0kV insulated gate bipolar transistor (IGBT) with trench gate structure by using an improved N-Base layer and an N-buffer layer. The new structure leads to improvement of conductivity modulation in N-Base. The numerical simulations show that the collector-emitter saturation voltage [Vce(sat)] and saturation current of new device are both lower than that of conventional IGBT with trench-gate structure. The details of physical mechanisms and analysis are also given.
Keywords :
bipolar transistors; buffer layers; N-buffer layer; collector-emitter saturation voltage; conductivity modulation; insulated gate bipolar transistor; saturation current; Buffer layers; Conductivity; Doping; Gaussian distribution; Impurities; Insulated gate bipolar transistors; Numerical simulation; Physics; Silicon; Voltage; Trench insulated gate bipolar transistor; conductivity modulation; power device; saturation voltage;
Conference_Titel :
Industrial Electronics and Applications, 2008. ICIEA 2008. 3rd IEEE Conference on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-1717-9
Electronic_ISBN :
978-1-4244-1718-6
DOI :
10.1109/ICIEA.2008.4582969
