A sub-1 mA LC SiGe BiCMOS 1.6 GHz differential VCO with KV Reduction

Author

Homol, David K.

fYear

2005

fDate

2005

Abstract

A 1.6 GHz fully-integrated manufacturable, low-current, low close-in phase noise, differential SiGe HBT BiCMOS voltage controlled oscillator (VCO) is published herein. Low KV with 35 MHz/V nominal has been designed using p-type voltage variable varactors (pVVCs). This VCO was designed and measured in freescale semiconductor´s HiP6wRF 0.4 m SiGe BiCMOS technology for -100 dBc/Hz at 100-kHz frequency offset or -96 dBc/Hz minimum over the entire tuning and trimming range and temperature. The oscillator has a trim/tune range from 1.35 to 1.75 GHz with a 825 Ampere core.

Keywords

BiCMOS analogue integrated circuits; UHF bipolar transistors; UHF integrated circuits; UHF oscillators; heterojunction bipolar transistors; integrated circuit design; integrated circuit measurement; integrated circuit testing; semiconductor materials; silicon compounds; varactors; voltage-controlled oscillators; 1 mA; 1.35 to 1.75 GHz; SiGe; VCO; differential SiGe HBT BiCMOS; freescale semiconductor; fully-integrated manufacturable oscillator; low close-in phase noise voltage controlled oscillator; low-current voltage controlled oscillator; p-type voltage variable varactors; BiCMOS integrated circuits; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Phase noise; Semiconductor device manufacture; Silicon germanium; Varactors; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology, 2005. WAMICON 2005. The 2005 IEEE Annual Conference

Print_ISBN

0-7803-8861-5

Type

conf

DOI

10.1109/WAMIC.2005.1528347

Filename

1528347