InAs/AlSb dual-gate HFETs

Summary form only given. Dual-gate FET structures have traditionally been very effective in minimizing short-channel effects by reducing the output conductance and by increasing the maximum allowable drain bias in more conventional material systems. In this paper we report the first implementation of InAs/AlSb dual-gate HFETs (DG-HFETs) which consist of two electrically distinct 1 /spl mu/m gate fingers with an intergate separation L/sub IG/=1 /spl mu/m, inserted between the source and drain ohmic contacts. The physical principles behind the InAs/AlSb DG-HFET device operation are discussed. DG-FETs have found widespread RF applications such as up/down-converter, gain control, and phase shifting circuits. In order to provide a proof-of-concept for the functionality of the present devices, we have successfully implemented a simple mixer circuit based on the present InAs/AlSb DG-HFETs. We believe this is the first realization of a functional circuit based on InAs/AlSb HFETs. The potential millimeter-wave performance of InAs/AlSb DG-HFETs is excellent and is discussed in this paper.