Title :
Properties of 22nm node extremely-thin-SOI MOSFETs
Author :
Rodriguez, N. ; Andrieu, F. ; Navarro, C. ; Faynot, O. ; Gamiz, F. ; Cristoloveanu, S.
Author_Institution :
Dept. Electron., Univ. of Granada, Granada, Spain
Abstract :
We have investigated the characteristics of 6nm thick, 22nm-node SOI MOSFETs by comparing the transport properties at the front (high-k) and back (SiO2) interfaces in a temperature range from -50° to 250°C. In addition to the mobility degradation with the channel length, an unusual mobility decrease at the SiO2 interface is observed in very narrow devices. For the shorter, narrower and thinner devices the transport characteristics tend to be the same regardless the interface where the carriers flow. Finally interface coupling dependence has been used to extract the density of states at the back interface.
Keywords :
MOSFET; high-k dielectric thin films; silicon compounds; silicon-on-insulator; SiO2; back interface; extremely-thin-SOI MOSFET; front high-k interface; interface coupling dependence; mobility degradation; size 22 nm; size 6 nm; temperature 50 degC to 250 degC; transport property; Degradation; Electron mobility; Logic gates; Strain; Temperature; Threshold voltage; Transistors;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081681
