Title :
Surface potential based model of ultra-thin fully depleted SOI MOSFET for IC simulations
Author :
Rozeau, Olivier ; Jaud, Marie-Anne ; Poiroux, Thierry ; Benosman, Mohamed
Abstract :
The paper presents the model´s core of fully depleted SOI MOSFET transistor. The model validated on UTSOI technology including temperature dependence. This model is implemented in VerilogA language, compatible with all commercial circuit simulators. Validation of this compact model performed with Eldo 2010.2, HSPICE 2009.09 and ADS 2006. Introduction of this model into commercial IC simulator in progress.
Keywords :
MOSFET; SPICE; circuit simulation; integrated circuit modelling; semiconductor device models; silicon-on-insulator; surface potential; ADS 2006; Eldo 2010; HSPICE 2009.09; IC simulations; UTSOI technology; VerilogA language; circuit simulators; surface potential based model; temperature dependence; ultra-thin fully depleted SOI MOSFET; Equations; Integrated circuit modeling; Logic gates; Mathematical model; Parameter extraction; Transistors;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081682
