DocumentCode :
2349223
Title :
Characteristics of amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallization
Author :
Kim, Yong Tae ; Lee, Chang Woo ; Kwon, Chul Soon ; Min, Suk-Ki ; Park, Sang Kyu
Author_Institution :
Korea Institute of Science and Technology
fYear :
1994
fDate :
1994
Firstpage :
44414
Lastpage :
45510
Keywords :
Amorphous materials; Chemical technology; Conductivity; Copper; Metallization; Semiconductor films; Sputtering; Substrates; Tungsten; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.863820
Filename :
863820
Link To Document :
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