An exercise of ET/UTBB SOI CMOS modeling and simulation with BSIM-IMG

Author

Chen, Qiang Brian ; Zhong, Xinghua ; Wu, Yanjun ; Zhu, Nengyong ; Huang, Wei ; Lu, Darsen ; Hu, Chenming ; Nguyen, Bich-yen ; Faynot, Olivier

Author_Institution

Accelicon Technol. Inc., Cupertino, CA, USA

fYear

2011

fDate

3-6 Oct. 2011

Firstpage

1

Lastpage

2

Abstract

This paper presents an exploratory application of BSIM-IMG (May/2011-release) to ET/UTBB SOI MOSFET modeling and circuit simulations. Compliance with fundamental compact model requirements and physical scalability with respect to technology parameters in BSIM-IMG are analyzed. BSIM-IMG model parameters are extracted on a 20nm technology. Simulation results are presented both for conventional benchmark and ET/UTBB SOI specific circuits.

Keywords

CMOS integrated circuits; MOSFET; circuit simulation; insulated gate field effect transistors; semiconductor device models; silicon-on-insulator; BSIM-IMG model parameters; CMOS simulation; ET/UTBB SOI CMOS modeling; ET/UTBB SOI MOSFET modeling; ET/UTBB SOI specific circuits; circuit simulations; conventional benchmark; exploratory application; fundamental compact model requirements; physical scalability; technology parameters; Doping; Fitting; Integrated circuit modeling; Logic gates; MOSFET circuits; Semiconductor device modeling; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference (SOI), 2011 IEEE International

Conference_Location

Tempe, AZ

ISSN

1078-621X

Print_ISBN

978-1-61284-761-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2011.6081683

Filename

6081683