Title :
An exercise of ET/UTBB SOI CMOS modeling and simulation with BSIM-IMG
Author :
Chen, Qiang Brian ; Zhong, Xinghua ; Wu, Yanjun ; Zhu, Nengyong ; Huang, Wei ; Lu, Darsen ; Hu, Chenming ; Nguyen, Bich-yen ; Faynot, Olivier
Author_Institution :
Accelicon Technol. Inc., Cupertino, CA, USA
Abstract :
This paper presents an exploratory application of BSIM-IMG (May/2011-release) to ET/UTBB SOI MOSFET modeling and circuit simulations. Compliance with fundamental compact model requirements and physical scalability with respect to technology parameters in BSIM-IMG are analyzed. BSIM-IMG model parameters are extracted on a 20nm technology. Simulation results are presented both for conventional benchmark and ET/UTBB SOI specific circuits.
Keywords :
CMOS integrated circuits; MOSFET; circuit simulation; insulated gate field effect transistors; semiconductor device models; silicon-on-insulator; BSIM-IMG model parameters; CMOS simulation; ET/UTBB SOI CMOS modeling; ET/UTBB SOI MOSFET modeling; ET/UTBB SOI specific circuits; circuit simulations; conventional benchmark; exploratory application; fundamental compact model requirements; physical scalability; technology parameters; Doping; Fitting; Integrated circuit modeling; Logic gates; MOSFET circuits; Semiconductor device modeling; Simulation;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081683
