DocumentCode
2349242
Title
Dark spatial solitons in semiconductor microcavities
Author
Larionova, Yevgeniya ; Weiss, Cart Otto
Author_Institution
Phys. Tech. Bundesanstalt, Braunschweig, Germany
fYear
2004
fDate
6-9 Sept. 2004
Firstpage
330
Lastpage
331
Abstract
This study reports the characteristics of dark solitons different from bright solitons. A striking feature of dark solitons observed in this work is a reflectivity higher than 1 at the center of the soliton. The reflectivity higher than 1 results because the soliton collects energy from its surrounding. As has been predicted for bright solitons this constitutes an optical amplification mechanism worthwhile considering for technical applications. Results show that in addition to the differential gain predicted for bright solitons, the dark solitons experimentally observed permit "DC gain", i.e. the reflected intensity is higher than the incident intensity. Thus dark solitons show "absolute" gain.
Keywords
laser cavity resonators; microcavities; optical solitons; quantum well lasers; reflectivity; DC gain; dark solitons; differential gain; optical amplification; reflectivity; semiconductor microcavities; spatial solitons; Information processing; Microcavities; Mirrors; Optical bistability; Optical reflection; Optical resonators; Optical solitons; Photonic band gap; Reflectivity; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser and Fiber-Optical Networks Modeling, 2004. Proceedings of LFNM 2004. 6th International Conference on
Print_ISBN
0-7803-8429-6
Type
conf
DOI
10.1109/LFNM.2004.1382506
Filename
1382506
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