Self-heating effects in ultrathin FD SOI transistors

We report the impact of self-heating effects (SHE) in 22nm-node Silicon on Insulator transistors with 6nm of silicon film thickness using a high-resolution current setup. The experiments show that, although the impact of SHE is less significant than in high-voltage devices, their role is still present. The average temperature increase in the channel due to self-heating is larger in the longer devices being responsible for decrease in the mobility and threshold voltage.