DocumentCode :
2349294
Title :
Road to Vmin=0.4V LSIs with least-variability FDSOI and back-bias control
Author :
Sugii, Nobuyuki
Author_Institution :
Low-power Electron. Assoc. & Project (LEAP), Japan
fYear :
2011
fDate :
3-6 Oct. 2011
Firstpage :
1
Lastpage :
19
Abstract :
Ultra low-power CMOS should be operated under Emin condition in principle. Compromise between E and speed is done with adaptive Vdd and Vb control. Reducing RDF variability and back-bias control is a key requirement for ULV-operation CMOS. SOTB is the suitable device structure for this purpose. From ULP application viewpoint, ULP wireless communication and power source are crucial issues as well as ULV LSIs. “Perpetuum Mobile” microcomputer awaits vast new application field.
Keywords :
CMOS integrated circuits; large scale integration; low-power electronics; silicon-on-insulator; FDSOI; LSI; Perpetuum Mobile microcomputer; RDF variability; SOTB; ULP wireless communication; back-bias control; power source; silicon-on-thin box; ultra low-power CMOS; voltage 0.4 V; Low power electronics; Noise; Random access memory; Reliability engineering; Roads; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
ISSN :
1078-621X
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2011.6081686
Filename :
6081686
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2349294
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