Analytical model for the surface potential and electrical field distribution of BPSOI devices

Author

Fang, Miao ; Chen, Jun-Nin ; Ke, Dao-ming ; Gao, Shan

Author_Institution

Anhui Univ., Hefei

fYear

2007

fDate

9-12 Sept. 2007

Firstpage

1953

Lastpage

1956

Abstract

A 2-D analytical model for the surface potential and electrical field distribution along the drift region of buried partial silicon on insulator (BPSOI) is presented. Based on the solution of the 2-D Poisson´s equation, the model gives the influence on the surface electrical field of the drain bias and structure parameters such as the length of the poly gate-field-plate, the length of the buried layer, and the substrate doping concentration. The analytical results are well supported by the simulation results obtained by Medici.

Keywords

Poisson equation; electric fields; semiconductor device models; semiconductor doping; silicon-on-insulator; surface potential; 2D Poisson equation; BPSOI devices; analytical model; buried partial silicon on insulator; doping concentration; electrical field distribution; poly gate-field-plate; surface potential; Analytical models; Dielectric substrates; Electric potential; Poisson equations; Position measurement; Q measurement; Semiconductor device doping; Semiconductor process modeling; Silicon on insulator technology; Voltage; BPSOI; surface electrical field; surface potential;

fLanguage

English

Publisher

ieee

Conference_Titel

EUROCON, 2007. The International Conference on "Computer as a Tool"

Conference_Location

Warsaw

Print_ISBN

978-1-4244-0813-9

Electronic_ISBN

978-1-4244-0813-9

Type

conf

DOI

10.1109/EURCON.2007.4400348

Filename

4400348