Title :
High dielectric constant Ta2O5 thin films prepared by rf magnetron sputtering for dynamic random access memory applications
Author :
Yeh, L.Y. ; Wang, J.J. ; Lee, J.Y.M. ; Hsu, J.Y. ; Lai, J.T. ; Chang, Y.S.
Author_Institution :
National Tsing-Hua University
Keywords :
DRAM chips; Dielectric constant; Dielectric measurements; Dielectric thin films; High-K gate dielectrics; Leakage current; MIM capacitors; Random access memory; Scanning electron microscopy; Sputtering;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.863879