2349339

High dielectric constant Ta₂O₅ thin films prepared by rf magnetron sputtering for dynamic random access memory applications

Yeh, L.Y. ; Wang, J.J. ; Lee, J.Y.M. ; Hsu, J.Y. ; Lai, J.T. ; Chang, Y.S.

National Tsing-Hua University

1994

1994

DRAM chips; Dielectric constant; Dielectric measurements; Dielectric thin films; High-K gate dielectrics; Leakage current; MIM capacitors; Random access memory; Scanning electron microscopy; Sputtering;

English

ieee

Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International

conf

10.1109/EDMS.1994.863879

863879