Title :
Analysis of the Low-Frequency Noise of Junctionless Nanowire Transistors operating in saturation
Author :
Doria, R.T. ; Trevisoli, R.D. ; de Souza, M. ; Colinge, J.P. ; Pavanello, M.A.
Author_Institution :
Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
Abstract :
This work presented the LF noise behavior of nMOS JNTs investigated by experimental results. It was shown that JNTs can present either 1/f or 1/f2 noises, depending on their operation region and the frequency. 1/f noise has been associated to carrier number fluctuations whereas 1/f2 can be related to defects in the depletion layer. The Wmask reduction degrades SId at higher VGT (~ 1 V) and present negligible influence on SId at lower VGT (~ 0.2 V).
Keywords :
1/f noise; MOSFET; nanowires; 1/f noise; 1/f2 noise; LF noise behavior; Wmask reduction; depletion layer defect; junctionless nanowire transistor; low-frequency noise behavior; nMOS JNT; Fluctuations; Logic gates; Low-frequency noise; Physics; Time frequency analysis; Transistors;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081688
