• DocumentCode
    2349350
  • Title

    Analysis of the Low-Frequency Noise of Junctionless Nanowire Transistors operating in saturation

  • Author

    Doria, R.T. ; Trevisoli, R.D. ; de Souza, M. ; Colinge, J.P. ; Pavanello, M.A.

  • Author_Institution
    Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
  • fYear
    2011
  • fDate
    3-6 Oct. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This work presented the LF noise behavior of nMOS JNTs investigated by experimental results. It was shown that JNTs can present either 1/f or 1/f2 noises, depending on their operation region and the frequency. 1/f noise has been associated to carrier number fluctuations whereas 1/f2 can be related to defects in the depletion layer. The Wmask reduction degrades SId at higher VGT (~ 1 V) and present negligible influence on SId at lower VGT (~ 0.2 V).
  • Keywords
    1/f noise; MOSFET; nanowires; 1/f noise; 1/f2 noise; LF noise behavior; Wmask reduction; depletion layer defect; junctionless nanowire transistor; low-frequency noise behavior; nMOS JNT; Fluctuations; Logic gates; Low-frequency noise; Physics; Time frequency analysis; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2011 IEEE International
  • Conference_Location
    Tempe, AZ
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-61284-761-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2011.6081688
  • Filename
    6081688
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349350