Title :
Millimeter-wave power amplifiers in 45nm CMOS SOI technology
Author :
Chen, Jing-Hwa ; Helmi, Sultan R. ; Mohammadi, Saeed
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
A fully-integrated mm-wave power amplifier (PA) with 50Ω input and output matching is designed in IBM 45nm SOI technology. The circuit utilizes electrically isolated CMOS SOI transistors in a stack to enhance the overall breakdown voltages and output impedance. The power amplifier demonstrates a power gain of 14.4 dB with a 3dB bandwidth of 27 GHz to 39 GHz and achieves a saturated output power of 22.4dBm and with a peak power-added efficiency (PAE) of 33%. This work demonstrates the proposed PA topology designed in deep scaled CMOS SOI technology is capable of delivering high-power at mm-wave frequencies.
Keywords :
CMOS integrated circuits; millimetre wave power amplifiers; millimetre wave transistors; silicon-on-insulator; CMOS SOI transistors; PAE; SOI technology; bandwidth 27 GHz to 39 GHz; gain 14.4 dB; millimeter-wave power amplifiers; power-added efficiency; size 45 nm; CMOS integrated circuits; CMOS technology; Cutoff frequency; Gain; Impedance; Power amplifiers; Transistors;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081689
