DocumentCode
2349406
Title
1/ƒ noise measurements of bonded SOS and Epi SOS fully-depleted MOSFETs to 10 MHz
Author
Chen, L.-W. ; Roach, J.W. ; Rotella, F.M.
Author_Institution
Peregrine Semicond. Corp., San Diego, CA, USA
fYear
2011
fDate
3-6 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
1/f noise measured up to a frequency of 10 MHz is compared for fully depleted MOSFETS on epitaxial silicon grown directly on sapphire and silicon bonded to sapphire for 0.35 um technology.
Keywords
1/f noise; MOSFET; elemental semiconductors; epitaxial growth; sapphire; semiconductor device noise; semiconductor growth; silicon; 1/f noise measurements; SOS fully-depleted MOSFET; Si; silicon-on-sapphire; size 0.35 mum; Frequency measurement; Logic gates; MOSFETs; Noise; Noise measurement; Silicon; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2011 IEEE International
Conference_Location
Tempe, AZ
ISSN
1078-621X
Print_ISBN
978-1-61284-761-0
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2011.6081692
Filename
6081692
Link To Document