Title :
Charge sensitive amplifier study in 2um FD SOI CMOS
Author :
Yee, L. Soung ; Martin, E. ; Cortina, E. ; Renaux, C. ; Flandre, D.
Author_Institution :
Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
A charge sensitive amplifier in 2um Fully Depleted (FD) Silicon on Insulator (SOI) CMOS technology has been designed according to the specifications of a silicon radiation detector. A set of five amplifiers has been produced in order to study the noise dependence on the input transistor size. Initial DC measurements are presented to validate the simulations.
Keywords :
CMOS integrated circuits; amplifiers; silicon radiation detectors; silicon-on-insulator; FD SOI CMOS technology; charge sensitive amplifier; fully depleted silicon on insulator CMOS technology; silicon radiation detector; CMOS integrated circuits; Capacitance; Detectors; Noise; Silicon on insulator technology; Transistors; Voltage measurement;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081694
