Title :
ESD considerations for SOI switch design
Author :
Chen, Yuh-Yue ; Lee, Tzung-Yin ; Lawrence, Ed ; Woods, Jeffrey
Author_Institution :
Skyworks Solutions, Inc., Irvine, CA, USA
Abstract :
This paper proposes a solution that employs transistor self-conduction and circuit design techniques to improve ESD performance for SOI RF switch applications. The primary limitations and challenges in the ESD design for SOI technology are discussed. The solution enables the switch to pass 8kV IEC as well as typical HBM standards.
Keywords :
IEC standards; electrostatic discharge; semiconductor switches; silicon-on-insulator; ESD considerations; IEC; SOI RF switch applications; circuit design techniques; transistor self-conduction; typical HBM standards; voltage 8 kV; Capacitors; Electrostatic discharge; Radio frequency; Switches; Thyristors; Transient analysis; Transistors;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081695
