DocumentCode
2349447
Title
ESD considerations for SOI switch design
Author
Chen, Yuh-Yue ; Lee, Tzung-Yin ; Lawrence, Ed ; Woods, Jeffrey
Author_Institution
Skyworks Solutions, Inc., Irvine, CA, USA
fYear
2011
fDate
3-6 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
This paper proposes a solution that employs transistor self-conduction and circuit design techniques to improve ESD performance for SOI RF switch applications. The primary limitations and challenges in the ESD design for SOI technology are discussed. The solution enables the switch to pass 8kV IEC as well as typical HBM standards.
Keywords
IEC standards; electrostatic discharge; semiconductor switches; silicon-on-insulator; ESD considerations; IEC; SOI RF switch applications; circuit design techniques; transistor self-conduction; typical HBM standards; voltage 8 kV; Capacitors; Electrostatic discharge; Radio frequency; Switches; Thyristors; Transient analysis; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2011 IEEE International
Conference_Location
Tempe, AZ
ISSN
1078-621X
Print_ISBN
978-1-61284-761-0
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2011.6081695
Filename
6081695
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