Title :
A complete drain and substrate current models of oxide damaged submicron LDD MOSFETs
Author :
Yang, J.-J. ; Su, J.S. ; Chung, Steve S.
Author_Institution :
National Chiao Tung University
Keywords :
Circuit analysis; Circuit simulation; Degradation; Electric resistance; Interface states; Light scattering; MOS devices; MOSFETs; Stress; Threshold voltage;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.863888
