• DocumentCode
    2349515
  • Title

    Reactive ion etching of 2 μm by 8 μm Si deep trench using photoresist as the etching mask

  • Author

    Lo, T.C. ; Zhang, J.S. ; Huang, H.C. ; Huang, G.W. ; Su, S. ; Chang, C.Y.

  • Author_Institution
    The Hong Kong University of Science and Technology
  • fYear
    1994
  • fDate
    1994
  • Keywords
    Anisotropic magnetoresistance; Electrodes; Etching; Integrated circuit technology; Isolation technology; Leakage current; MMICs; Microwave integrated circuits; Resists; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.863890
  • Filename
    863890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2349515