Title :
Reactive ion etching of 2 μm by 8 μm Si deep trench using photoresist as the etching mask
Author :
Lo, T.C. ; Zhang, J.S. ; Huang, H.C. ; Huang, G.W. ; Su, S. ; Chang, C.Y.
Author_Institution :
The Hong Kong University of Science and Technology
Keywords :
Anisotropic magnetoresistance; Electrodes; Etching; Integrated circuit technology; Isolation technology; Leakage current; MMICs; Microwave integrated circuits; Resists; Silicon;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.863890
