DocumentCode
2349577
Title
DC and transient analysis of a SiGe-base heterojunction bipolar device with an extended germanium profile into the n- Epi region in an ECL buffer considering high injection
Author
Chen, B.Y. ; Kuo, J.B.
Author_Institution
National Taiwan University
fYear
1994
fDate
1994
Keywords
Charge carrier processes; Circuits; Degradation; Doping profiles; Frequency; Germanium; Heterojunction bipolar transistors; Performance gain; Photonic band gap; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type
conf
DOI
10.1109/EDMS.1994.863894
Filename
863894
Link To Document