2349577

DC and transient analysis of a SiGe-base heterojunction bipolar device with an extended germanium profile into the n- Epi region in an ECL buffer considering high injection

Chen, B.Y. ; Kuo, J.B.

National Taiwan University

1994

1994

Charge carrier processes; Circuits; Degradation; Doping profiles; Frequency; Germanium; Heterojunction bipolar transistors; Performance gain; Photonic band gap; Transient analysis;

English

ieee

Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International

conf

10.1109/EDMS.1994.863894

863894