Title :
Steep-subthreshold-slope devices on SOI
Author :
Liu, Tsu-Jae King ; Matheu, Peter ; Jacobson, Zachery ; Kim, Sung Hwan
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Univ. of California, Berkeley, CA, USA
Abstract :
The use of an SOI substrate together with a small-band gap source material is advantageous for optimizing TFET manufacturability and performance.
Keywords :
MOSFET; energy gap; silicon-on-insulator; tunnel transistors; SOI substrate; TFET manufacturability; TFET performance; small-band gap source material; steep-subthreshold-slope devices; CMOS integrated circuits; Heterojunctions; Logic gates; Silicon; Substrates; Transistors; Tunneling;
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-61284-761-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2011.6081702
